Microstructure evolution and passivation quality of hydrogenated amorphous silicon oxide(a-SiOx:H) on〈100〉- and 〈111〉-orientated c-Si wafers

Hydrogenated amorphous silicon oxide(a-SiOx:H) is an attractive passivation material to suppress epitaxial growth and reduce the parasitic absorption loss in silicon heterojunction(SHJ) solar cells. In this paper, a-SiOx:H layers on different orientated c-Si substrates are fabricated. An optimal effective lifetime(τ(eff)) of 4743 μs and corresponding implied opencircuit voltage(iV(oc)) of 724 mV are obtained on〈100〉-orientated c-Si wafers. While τ(eff) of 2429 μs and iV_oc of 699 mV are achieved on 111-orientated substrate. The FTIR and XPS results indicate that the a-SiOx:H network consists of SiOx(Si-rich), Si–OH, Si–O–SiHx, SiO2 ≡ Si–Si, and O3 ≡ Si–Si. A passivation evolution mechanism is proposed to explain the different passivation results on different c-Si wafers. By modulating the a-SiOx:H layer, the planar silicon heterojunction solar cell can achieve an efficiency of 18.15%.     

Wafer thickness optimization for silicon solar cells of heterogeneous material quality

In this Letter, we introduce a method of calculating the optimal wafer thickness for silicon solar cells with multicrystalline bulk material. The optimal thickness depends on the relation of bulk recombination to surface recombination and the light trapping. For multicrystalline silicon bulk recombination strongly varies laterally and with injection level, which complicates the calculations. A thickness optimization using the “Efficiency Limiting Bulk Recombination Analysis” (ELBA) takes all these effects correctly into account. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Reflection of keV heavy-ion beams from solid targets. Dependence on energy and angle of incidence

Recent experimental and theoretical studies of the reflection of keV heavy-ion beams have been extended to higher energies and to non-perpendicular incidence. The reflection coefficient for Na⁺ and K⁺ ions backscattered from polycrystalline gold and silver targets has been obtained for perpendicular incidence at energies of 100–500 keV. The dependence on angle of incidence has been investigated at 30 keV for the same combinations of targets and projectiles. Effects of electronic stopping have been included in the theoretical calculations. Good agreement between the experimental results and the theoretical calculations is found.     

Carrier removal by implanted IONS in GaAs

Abstract

A model for calculation of the range distribution of energetic ions with taking into account the channeling effect is proposed. The measurement of the depth distributions of boron ions in silicon crystals implanted at 13.6 and 91 MeV revealed significant difference between the measured and the calculated range profiles when the channeling effects have not been included in the calculation. In spite of deminishing the critical angles of channeling with growing ion energy the probability of the capture of ions into the channeling regime is significant in case of high energy implantation even when the incident angles are 7–10° off the main crystallographic directions.     

Studies on the Silylation Reaction of α,β-Epoxy Esters Synthesized by Darzen's Condensation Reaction

Me₃SiCl/Mg in HMPA was used for silylation of α,β-epoxy esters resulting in the corresponding β-silylated esters in a one pot reaction with reasonable yields.     

Synthesis by FVT and Characterization of Unhindered Silanethiones

The retro-ene reaction of allylthio- and propargylthiosilanes led, under flash vacuum thermolysis (FVT) conditions, to unhindered silanethiones, characterized by their derivatives, and also directly by coupling of the FVT with gas-phase spectrometries. Monomeric silicon oxysulfide has been generated similarly. The unsubstituted silanethione was not obtained, but dehydrogenated into silicon monosulfide during FVT.     

Formation of a crosslinked POSS network by an unusual hydrosilylation: Thermo‐oxidative stabilization of the α‐cristobalite phase in its amorphous regions

A semicrystalline inorganic–organic hybrid crosslinked network containing polyhedral oligomeric silsesquioxane (POSS) cores was constructed by the unusual hydrosilylation of the terminal vinyl groups of an internal acetylene‐containing silane linker by a POSS monomer. Products from the thermal treatments of this network in either argon or air at 250, 550, and 1000 °C, respectively, were characterized by Fourier transform infrared, Solid‐state ¹³C and ²⁹Si magic angle spinning NMR, X‐ray diffraction and XPS analyses. The highly symmetrically functionalized POSS silica clusters, in the fluorite silica phase, in the network were found to remain unchanged on thermal treatment possibly due to the shielding of the silica core by the functionalities and a cancellation of thermal stresses on the silica core. Stabilization of the metastable α‐cristobalite phase, which is typically formed on cooling by a β‐ to α‐transition of the β‐cristobalite phase formed above 1400 °C, was observed in the amorphous regions in the network sample treated only to 1000 °C in air. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012